学術論文
IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition, S. Kobayashi, World Journal of Condensed Matter Physics, 6, 287-293, 2016年
Improvement in Luminance Efficiency of Organic Light Emitting Diodes by Suppression of Secondary Electron Bombardment of Substrate during Sputter Deposition of Top Electrode Films, D. Hamaguchi, S. Kobayashi, T. Uchida, Y. Sawada, H. Lei, and Y. Hoshi, Jpn. J. Appl. Phys., 55, 106501, 2016年
Development of Low Damage Sputter-Deposition Method for the Preparation of Organic Light Emitting Diode, Y. Hoshi, S. Kobayashi, T. Uchida, Y. Sawada, and H. Lei, J. the Vacuum Society of Japan, 59, 59-64, 2016年
Comparative Studies on Damages to Organic Layer during the Deposition of ITO Films by Various Sputtering Methods, H. Lei, M. Wang, Y. Hoshi, T. Uchida, S. Kobayashi, and Y. Sawada, Applied Surface Science, 285P, 389-394, 2013年
Electron-Bombardment-Induced Damage to Organic Light Emission Layer, H. Lei, Y. Hoshi, M. Wang, T. Uchida, S. Kobayashi, and Y. Sawada, Jpn. J. Appl. Phys., 49, 042103, 2010年
Effect of Isochronal Hydrogen Annealing on Surface Roughness and Threading Dislocation Density of Epitaxial Germanium Films Grown on Silicon, S. Kobayashi, Y. Nishi, and K.C. Saraswat, Thin Solid Films, 518, S136-S139, 2010年
Deposition of Luminescent a-SiNx:H Films with SiH4 – N2 Gas Mixture by VHF-PECVD Using Novel Impedance Matching Method, S. Kobayashi, N. Ohrui, Y.C. Chao, T. Aoki, H. Kobayashi and T. Asakawa., J. Material Science: Materials in Electronics, pp.29-32, 2007年
研究発表
IR spectroscopic study of air-exposed silicon nitride films grown at a low substrate temperatures using VHF-PECVD, S. Kobayashi, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics, (Research Institute of Electrical Communication, Tohoku University), 2017年, (学会発表（海外・国際学会）)
In situ IR spectroscopic study during air-exposure of silicon nitride films deposited at a low substrate temperature by PECVD, S. Kobayashi, European Materials Research Society 2015 Spring Meeting, EE-PI 18, France, 2015年, (学会発表（海外・国際学会）)
VHF-PECVDで形成したSiNx膜中の化学結合経時変化（II), 小林信一, 第61回応用物理学関係連合講演会, 19a-PA4-8, 青山学院大学, 2014年, (学会発表（国内学会）)
Chemical Bonding in Silicon Nitride Films Deposited with SiH4 /N2 by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition, S. Kobayashi, AVS-60: American Vacuum Society 60th International Conference and Exhibition, TF-ThP12, USA, 2013年, (学会発表（海外・国際学会）)
VHF-PECVDで形成したSiNx膜中の化学結合経時変化, 小林信一, 第74回応用物理学会学術講演会, 17p-P2-21, 同志社大学, 2013年, (学会発表（国内学会）)
有機EL素子上部電極膜作製のためのスパッタ成膜法の検討, 星陽一、小林信一、内田孝幸、清水英彦, 第74回応用物理学会学術講演会, 19p-C7-1, 同志社大学, 2013年, (学会発表（国内学会）)
SiH4＋N2ガスを用いたVHF-PECVD法によるSiNxの膜構造, 小林信一, 第60回応用物理学関係連合講演会, 27p-A7-10, 神奈川工科大学, 2013年, (学会発表（国内学会）)
Structural information from IR spectroscopy on a-SiNx:H deposited from SiH4 – N2 gas mixture using VHF-PECVD, S. Kobayashi, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics, (Research Institute of Electrical Communication, Tohoku University), 2013年, (学会発表（海外・国際学会）)
SiH4＋N2ガスを用いたVHF-PECVD法によるSiNx膜の構造変化, 小林信一, 第73回応用物理学会学術講演会, 12a-E1-6, 愛媛大学, 2012年, (学会発表（国内学会）)
SiH4＋N2ガスを原料とするVHF-PECVD法によるSiNx低温成膜, 小林信一, 第59回応用物理学関係連合講演会, 16a-A6-6, 早稲田大学, 2012年, (学会発表（国内学会）)
Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si, S. Kobayashi, Y. Nishi, and K.C. Saraswat, 6th International Conference on Silicon Epitaxy and Heterostructures, USA, 2009年, (学会発表（海外・国際学会）)
Deposition of Luminescent a-SiNx:H Films with SiH4 – N2 Gas Mixture by VHF-PECVD Using Novel Impedance Matching Method, S. Kobayashi, N. Ohrui, Y.C. Chao, T. Aoki, H. Kobayashi and T. Asakawa., International Conference on Optical and Optoelectronic Properties of Materials and Applications, Darwin, Australia, 2006年, (学会発表（海外・国際学会）)